Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2007-06-05
2007-06-05
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S010000, C438S796000, C438S795000, C438S940000, C428S210000
Reexamination Certificate
active
10969791
ABSTRACT:
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.
REFERENCES:
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 6121121 (2000-09-01), Koide
patent: 6252255 (2001-06-01), Ueta et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6503610 (2003-01-01), Hiramatsu et al.
patent: 6592663 (2003-07-01), Sarayama et al.
patent: 6614059 (2003-09-01), Tsujimura et al.
patent: 6667252 (2003-12-01), Miyajima et al.
patent: 2003/0042496 (2003-03-01), Sasaoka
patent: 2004/0124434 (2004-07-01), D'Evelyn et al.
patent: 2004/0144300 (2004-07-01), Kitaoka et al.
patent: 2004/0147096 (2004-07-01), Kitaoka et al.
patent: 2004/0183090 (2004-09-01), Kitaoka et al.
patent: 2004/0262630 (2004-12-01), Kitaoka et al.
patent: 2005/0011432 (2005-01-01), Kitaoka et al.
patent: 2005/0082564 (2005-04-01), Kitaoka et al.
patent: 2002-293696 (2002-10-01), None
patent: 3409576 (2003-03-01), None
patent: 2000-357663 (2003-12-01), None
patent: 2004/013385 (2004-02-01), None
Kawamura, et al., “Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique”, Jpn. J. Appl. Phys., vol. 42, part 2, No. 1A/B, Jan. 15, 2003, pp. L4-L6.
Kozawa, et al., “Raman scattering from LO phonon-plasmon coupled modes in gallium nitride”, Journal of Applied Physics. Jan. 15, 1994, 74(2). 1098-1101—Abstract Only.
M. Morishita. et al. “The growth mechanism of GaN singles crystals in Na flux system”, Journal of the Japanese association for crystal growth. vol. 30, No. 3 (2003), 801aA7.
M. Morishita, et al., “Growth of transparent GaN single Crystals using LPE technique in Na flux system”, The Japan Society of Applied Physics and Related Societies. Extended Abstracts (The 51st Spring Meeting, 2004), 29 p-YK-6.
Kidoguchi Isao
Kitaoka Yasuo
Minemoto Hisashi
Tsukamoto Kazuyoshi
Fenty Jesse
Hamre Schumann Mueller & Larson P.C.
Parker Kenneth
LandOfFree
Group-III-element nitride crystal semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group-III-element nitride crystal semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group-III-element nitride crystal semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3819870