Metal treatment – Stock – Copper base
Reexamination Certificate
2004-08-13
2010-06-29
Ip, Sikyin (Department: 1793)
Metal treatment
Stock
Copper base
C148S433000, C148S434000, C148S435000, C148S436000, C420S489000, C136S262000, C136S263000, C438S478000
Reexamination Certificate
active
07744705
ABSTRACT:
This invention relates to group IB-IIIA. VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically, the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 10° reflects an absolute shift in the 2θ(112)angle of less than 0.06°.
REFERENCES:
patent: 5356839 (1994-10-01), Tuttle et al.
patent: 5436204 (1995-07-01), Albin et al.
patent: 5441897 (1995-08-01), Noufi et al.
patent: 0724775 (1995-08-01), None
patent: 0694209 (1996-01-01), None
patent: WO9424696 (1994-10-01), None
patent: WO9606454 (1996-02-01), None
patent: WO9625768 (1996-08-01), None
International Search Report, International Application No. PCT/IB2004/051458, mailed Jul. 12, 2005.
International Search Report, International Application No. PCT/IB2004/051459, mailed Jul. 27, 2005.
International Preliminary Report on Patentability, International Application No. PCT/IB2004/051459, mailed Dec. 22, 2005.
Kushiya et al. “Development of Cu(InGa)Se2Thin-Film Solar Cells with Zn-Compound Buffer” 13thEuropean Photovoltaic Solar Energy Conference, Nice, France, Oct. 1995, vol. 2 of 2, Conf. 13, pp. 2016-2019.
Kushiya et al. “Formation Chemistry of Polycrystalline Cu(InGa)Se2Thin-Film Absorbers Prepared by Selenization of Cu-Ga/In Stacked Precursor Layers with H2Se Gas” Mat. Res. Soc. Symp. Proc., 1996, 426: 177-182.
Kushiya et al. “The Role of Cu(InGa)(SeS)2Surface Layer on a Graded Band-Gap Cu(InGa)Se2Thin-Film Solar Cell Prepared by Two-Stage Method” 25thPhotovoltaic Specialists Conference, pp. 989-992 (May 1996).
Nagoya et al. “Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber” Solar Energy Materials and Solar Cells, vol. 67, No. 1-4, Mar. 2001, pp. 247-253.
Ohashi et al. “Improved CIGS thin-film solar cells by surface sulfurization using In2S3 and sulfur vapor” Solar Energy Materials and Solar Cells, Elsevier Science Publishers, Amsterdam, NL, vol. 67, No. I-4, Mar. 2001, pp. 261-265.
Turcu et al. “Composition dependence of defect energies and band alignments in the Cu(In1-xGax)(Se1-ySy)2alloy system” Journal of Applied Physics, Feb. 1, 2002, 91(3): 1391-1399.
File wrapper for U.S. Appl. No. 10/568,227, filed May 17, 2006, titled “Method for the Preparation of Group IB-IIA-VIA Quaternary or Higher Alloy Semiconductor Films”, listing as inventor Vivian Alberts.
V. Alberts, J. H. Schön, and E. Bucher,Journal of Appl. Phys., 84(12), 1998, 6881-6885, “Improved material properties of polycrystalline CulnSe2prepared by rapid thermal treatment of metallic allows in H2Se/Ar.”
J. Palm, V. Probst, W. Stetter et al.,Thin Solid Films, 451-452 (2004) 544-551, “CISSSe thin film PV modules: from fundamental investigations to advanced performance and stability.”
M. Marudachalam, H. Hichri, R. Klenk, R.W. Birkmire, W.N. Schfarman and J. M. Schultz,Appl. Phys. Lett.67(26), 1995, 3978, “Preparation of homogeneous Cu(InGa)Se2films by selenization of metal precursors in H2Se atmosphere.”
K. Kushiya, M. Tachiyuki, T. Kase, I. Sugiyama, Y. Nagoya, D. Okumura, M. Satoh, O. Yamase and H. Takeshita Sol. Energy Mater. Sol. Cells 49, 1997, 277, “Fabrication of graded band-gap Cu(InGa)Se2thin-film mini-modules with a Zn(O,S,OH)xbuffer layer.”
I. M. Kötschau, H. Kerber, H. Wiesner, G. Hanna and H. W. Schock, Proceedings of the 16thEuropean Photovoltaic Solar Energy Conference, May 1-5, 2000, Glasgow, UK, pp. 724-727, “Band Gap Grading in Cu(In,Ga)(S,SE)2—based solar cells.”
R. Gay, M. Dietrich, C. Fredric, C. Jensen, K. Knappm, D. Tarrant and D. Willett, “Efficiency and process improvements in CulnSe2-based modules” Proceedings of the international conference on E. C. Photovoltaic Solar Energy, vol. 12 (1), 1994, 935-938.
T. Nakada, H. Ohbo, T. Watanabe, H. Nakazawa, M. Matsui and A. Kunioka, Solar Energy Materials and Solar Cells 49, 1997, 285, “Improved Cu(In,Ga)(S,Se)2thin film solar cells by solar sulfurization.”
A. Gupta and S. Isomura,Sol. Energy Mater. Sol Cells53, 1998, 385, “Precursor modification for preparation of CIS films by selenization technique.”
Office Action dated Apr. 22, 2009 for U.S. Appl. No. 10/568,227, filed May 17, 2006.
“Experimental study of graded bandgap Cu(InGa)(SeS)2thin films grown on glass/molybdenum substrates by selenization and sulphidation” by Delsol et al. Solar Energy Materials a& Solar Cells 82 (2004) 587-599.
Ip Sikyin
Knobbe Martens Olson & Bear LLP
University of Johannesburg
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