Ground structure for page read and page write for flash memory

Details Ground structure for page read and page write for flash memory Ground structure for page read and page write for flash memory

2005-02-22

2005-02-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110

Reexamination Certificate

active

06859393

ABSTRACT:
A ground structure for page read and page write for flash memory. An array structure of flash memory cells comprises a plurality of sectors. Each sector comprises I/O blocks plus reference arrays and an array of redundant cells. Each I/O block comprises sub I/O blocks. Each sub I/O block within an I/O block, as well as other structures including reference cells, redundant cells and edge structures is coupled to a unique ground reference signal. These unique ground reference signals may be selectively coupled to a system ground or a biased ground reference. This novel ground arrangement enables a page read operation in which one bit from each sub I/O block can be read simultaneously. In addition, one bit from each I/O block may be programmed simultaneously. Further, the ground reference voltage for cells of the array may be selectively adjusted to optimize operation.

REFERENCES:
patent: 6134144 (2000-10-01), Lin et al.

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