Ground shields for semiconductors

Details Ground shields for semiconductors Ground shields for semiconductors

2008-05-06

2008-05-06

Ngo, Hung V. (Department: 2831)

Electricity: conductors and insulators

Anti-inductive structures

Shielded

C174S377000, C257S659000

Reexamination Certificate

active

11347461

ABSTRACT:
A semiconductor device, such as a RF LDMOS, having a ground shield that has a pair of stacked metal layers. The first metal layer extends along the length of the semiconductor device and is formed on the upper surface of the semiconductor device body. The first layer has a series of regularly spaced apart lateral first slots. The second metal layer, coextensive with and located above the first metal layer, has a series of regularly spaced apart lateral second slots. The second slots overlie the spaces between the first slots, and the continuous portions of the second metal layer overlie the first slots. The slots are substantially parallel to wires extending over the ground shield. The ground shield is not limited to only two metal layers. The ground shield has a repeating unit design that facilitates automated design.

REFERENCES:
patent: 5594279 (1997-01-01), Itou et al.
patent: 5616952 (1997-04-01), Nakano et al.
patent: 6611041 (2003-08-01), Maeda et al.
patent: 6744117 (2004-06-01), Dragon et al.
patent: 2007/0007557 (2007-01-01), Kwak et al.

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