Grooved Schottky barrier photodiode for infrared sensing

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357 15, 357 55, 357 60, 357 67, 357 32, H01L 2714

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048765864

ABSTRACT:
A sensor optimized for detecting infrared radiation is formed by a Schottky barrier photodiode having a corrugated upper surface upon which a thin layer of metal silicide is deposited. The corrugated surface is formed by selective etching of a (100) silicon wafer to expose the (111) crystalline plane.

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