Grid-inserted quantum structure

Details Grid-inserted quantum structure Grid-inserted quantum structure

1990-01-12

1991-10-01

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, H01S 319

Patent

active

050540300

ABSTRACT:
A grid-inserted quantum structure which exhibits a quantum size effect and in which a material (3), (4) dissimilar to that of a confining layer (1) having a high level of electron affinity is disposed on both sides or one side of the confining layer (1), comprises grids (2) which are composed of a dissimilar material having an attraction potential or a repulsion potential and which are disposed at equal intervals. This structure enables electrons to be captured in regions without the grids (2) or around the grids (2) owing to the interaction between the electrons and the grids (2) in the confining layer (1). Further, the effective function of the potential of the grids (2) enables the same effect as that obtained by several tens atomic layers of a dissimilar material to be obtained by one or several atomic layers.

REFERENCES:
patent: 4843032 (1989-06-01), Tokuda et al.
patent: 4868839 (1989-09-01), Simmons et al.
1989 American Institute of Physics, "Formation of Planar Superlattice States in New Grid-Inserted Quantum Well Structures", Appl. Phys. Lett. 54 (14), 3 Apr. 1989, pp. 1326, 1327, 1328.

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