Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification
Reexamination Certificate
2011-08-30
2011-08-30
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Analysis and verification
C716S055000
Reexamination Certificate
active
08010915
ABSTRACT:
An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.
REFERENCES:
patent: 5657235 (1997-08-01), Liebmann et al.
patent: 6282696 (2001-08-01), Garza et al.
patent: 6792592 (2004-09-01), Keogan et al.
patent: 7080349 (2006-07-01), Babcock et al.
patent: 7188322 (2007-03-01), Cohn et al.
patent: 7325225 (2008-01-01), Tanaka et al.
patent: 7376931 (2008-05-01), Kokubun
patent: 7648803 (2010-01-01), Sivakumar et al.
patent: 2002/0026626 (2002-02-01), Randall et al.
patent: 2002/0045110 (2002-04-01), Ohnuma
patent: 2003/0149955 (2003-08-01), Ohnuma
patent: 2004/0044984 (2004-03-01), Keogan et al.
patent: 2005/0278686 (2005-12-01), Word et al.
patent: 2006/0195809 (2006-08-01), Cohn et al.
patent: 2007/0079277 (2007-04-01), Golubtsov et al.
patent: 2008/0032204 (2008-02-01), Herold
patent: 2008/0141203 (2008-06-01), Scaman
Ackmann Paul Willard
Chen Norman Shaowen
Goad Scott
GlobalFoundries Inc.
Ingrassia Fisher & Lorenz P.C.
Whitmore Stacy A
LandOfFree
Grid-based fragmentation for optical proximity correction in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Grid-based fragmentation for optical proximity correction in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Grid-based fragmentation for optical proximity correction in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2670544