1977-09-14
1978-07-18
Edlow, Martin H.
357 63, 357 90, H01L 3300
Patent
active
041019202
ABSTRACT:
A green light emitting diode of gallium phosphide having an epitaxial layer consisting of P and N type layer portions. A donor concentration in the N type layer, an acceptor concentration gradient in the P type layer and nitrogen concentration near the pn junction are selected respectively at predetermined values.
REFERENCES:
patent: 3911462 (1975-10-01), Butter
patent: 3931631 (1976-01-01), Groves
Kaneko Kunio
Nagasawa Hiroyuki
Edlow Martin H.
Sony Corporation
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