Green light emitting diode

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Details

357 63, 357 90, H01L 3300

Patent

active

041019202

ABSTRACT:
A green light emitting diode of gallium phosphide having an epitaxial layer consisting of P and N type layer portions. A donor concentration in the N type layer, an acceptor concentration gradient in the P type layer and nitrogen concentration near the pn junction are selected respectively at predetermined values.

REFERENCES:
patent: 3911462 (1975-10-01), Butter
patent: 3931631 (1976-01-01), Groves

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