1981-04-06
1983-11-22
Edlow, Martin H.
357 90, H01L 3300
Patent
active
044172621
ABSTRACT:
A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.
REFERENCES:
patent: 4101920 (1978-07-01), Nagasawa
Beppu Tatsuro
Iwamoto Masami
Kasami Akinobu
Tashiro Makoto
Edlow Martin H.
Tokyo Shibaura Denki Kabushiki Kaisha
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