Green light emitting device

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Details

357 18, 357 88, 357 89, H01L 3300

Patent

active

042246326

ABSTRACT:
A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.

REFERENCES:
patent: 4101920 (1978-07-01), Nagasawa
Gillessen et al., IEEE Trans. on Electron Devices, vol. ED-24, No. 7 (Jul. 1977), pp. 944-946.

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