Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-11-05
2000-04-25
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438707, 438723, H01L 21302, H01L 21461
Patent
active
060543906
ABSTRACT:
A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed horizontally spaced over the substrate a plurality of patterned microelectronics structures. There is then formed over the substrate and the plurality of patterned microelectronics structures a microelectronics layer. The microelectronics layer has a first region of the microelectronics layer interposed between the plurality of patterned microelectronics structures and a second region of the microelectronics layer not interposed between the plurality of microelectronics structures. Finally, there is processed through a grazing angle method the microelectronics layer, where the grazing angle method processes substantially all of the second region of the microelectronics layer without substantially processing the first region of the microelectronics layer. There is also disclosed a apparatus through which may be practiced the grazing angle method, where the apparatus employs a charged particle beam within the grazing angle method and where the charged particle beam is spirally magnetically constrained by a magnetic field perpendicular to the substrate.
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Lin Charles
Lin Yih-Shung
Liu Erzhuang
Chartered Semiconductor Manufacturing Ltd.
Deo Duy-Vu
Pike Rosemary L.S.
Saile George O.
Szecsy Alek P.
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