Grayscale reticle for precise control of photoresist exposure

Details Grayscale reticle for precise control of photoresist exposure Grayscale reticle for precise control of photoresist exposure

2006-10-27

2008-10-21

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S034000, C438S048000, C438S942000, C257SE21023

Reexamination Certificate

active

07439187

ABSTRACT:
A method of fabricating a grayscale reticule includes preparing a quartz substrate; depositing a layer of silicon-rich oxide on the quartz substrate; depositing a layer of silicon nitride as an oxidation barrier layer on the silicon-rich oxide layer; depositing and patterning a layer of photoresist; etching the silicon nitride layer with a pattern for the silicon nitride layer; removing the photoresist; cleaning the quartz substrate and the remaining layers; oxidizing the quartz substrate and the layers thereon, thereby converting the silicon-rich oxide layer to a transparent silicon dioxide layer; removing the remaining silicon nitride layer; forming the quartz substrate and the silicon dioxide thereon into a reticule; and using the reticule to pattern a microlens array.

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