Gray scale mask and depth pattern transfer technique using inorg

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430296, G03F 900

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059980664

ABSTRACT:
A method of producing a high resolution expanded analog gray scale mask is described. Using an inorganic chalcogenide glass, such as a selenium germanium, coated with a thin layer of silver, a gray scale mask may be produced with accurate control of the size, uniformity and variance of the pixels. The selenium germanium glass is composed of column structures arranged perpendicularly to the substrate giving a possible edge precision of 100 .ANG.. The column structures also prevent undercutting during the etching process, thus permitting pixels to be placed close together. Accordingly, selenium germanium may be used as a high resolution gray scale mask with an expanded analog gray scale. The gray scale mask may be used to impress information as a modulated thickness on a selenium germanium photoresist film on an inorganic substrate. The selenium germanium photoresist film may then transfer the gray scale to the substrate.

REFERENCES:
patent: 4127414 (1978-11-01), Yoshikawa et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4350541 (1982-09-01), Mizushima et al.
patent: 4454221 (1984-06-01), Chen et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5314772 (1994-05-01), Kozicki et al.
patent: 5480764 (1996-01-01), Gal et al.
B. Singh et al.: "Sub-50-nm Lithography in Amorophous Se-Ge Inorganic Resist by Electron Beam Exposure" Applied Physics Letters, vol. 41, Nov. 15, 1982, pp. 1002-1004, XP002076766.
Translation of Japanese Patent 47-27218.
Translation of Japanese Patent 57-105739.
Translation of Japanese Patent 51-136287.
Yoshikawa, et al., "A new inorganic electron resist of high contrast", Applied Physics Letters, vol. 31, No. 3, pp. 161-163 (Aug. 1, 1977).
Yoshikawa, et al., "A Novel inorganic photoresist utilizing Ag photodoping in Se-Ge glass films" Applied Physics Letters, vol.29, No. 10, pp. 677-679 (Nov. 15, 1976).
Daschner, et al., "Cost-effective mass fabrication of multilevel diffractive optical elements by use of a single optical exposure with a gray-scale mask on high energy beam-sensitive glass", Applied Optics, vol. 36, No. 20 (Jul. 10, 1997).
Yoshikawa, "Amorphous Chalcogenide Inorganic Resist", Journal of Photoplymer Science and Technology, vol. 7, No. 3, pp. 577-584 (1994).
Wolf, et al., "Lithography I: Optical Photoresist Materials And Process Technology", Silicon Processing For The VLSI Era, vol. 1, pp. 407-414 and 424-429 (1986).
Hawley's Condensed Chemical Dictionary, John Wiley & Sons, Inc., p. 89, 1997.
Daschner, et al., "Cost Effective Mass Fabrication of Multilevel Diffractive Optical Elements Using a Single Optical Exposure with a Gray-Scale Mask on High Energy Beam Sensitive Glass", University of California San Diego, Department of Electrical and Computer Engineering, pp. 1-22.
Ong et al., "Germanium-Selenium (Ge-Se) Based Resist Systems for Submicron VLSI Application", Proceedings of the Symposium on Inorganic Resist Systems, Proceedings vol. 82-9, pp. 39-48.
Nagai, et al., "New Application of Se-Ge Glasses to Silicon Microfabrication Technology", Applied Physics Letters, vol. 28, No. 3, Feb. 1, 1976, pp. 145-147.
Ong et al., "Multilayer Resists for Fine Line Optical Lithography", Solid State Technology, Jun. 1984, pp. 155-160.
Opplinger et al, "One-Step 3D Shaping Using a Gray-Tone Mask for Optical and Microelectronic Applications", Microelectronic Engineering 23 (1994), pp. 449-454.
Poleschuk, "Fabrication of Phase Structures with Continuous and Multilevel Profile for Diffraction Optics", SPIE vol. 1574 International Colloquium on Diffractive Optical Elements (1991), pp. 89-100.
Reimer et al, "One-Level Gray-Tone Lithography--Mask Data Preparation and Pattern Transfer", SPIE vol. 2783, pp. 71-79.
Tai, et al., "Bilevel High Resolution Photolighographic Technique for Use with Wafers with Stepped and/or Reflecting Surfaces", J. Vac. Sci. Technology, vol. 16, No. 6, Nov./Dec. 1979, pp. 1977-1979.
Yoshikawa et al., "A New Inorganic Electron Resist of High Contrast", Applied Physics Letters, vol. 31, No. 3, Aug. 1, 1977, pp. 161-163.
Yoshikawa et al., "A Novel Inorganic Photoresist Utilizing Ag Photodoping in Se-Ge Glass Films", Applied Physics Letters, vol. 29, No. 10, Nov. 15, 1976, pp. 677-679.
"A Single All-Glass Phototool Replaces Five Binary Chrome Masks for 3D Shaping", Hebs-Glass Photomask Blanks, CMI Product Information No. 94-88S.
"A Single All-Glass Phototool Replaces Five Binary Chrome Masks for 3D Shaping", Herbs-Glass Photomask Blanks, CMI Product Information No. 96-01, User's Manual, pp. 1-15.

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