Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-02-15
2005-02-15
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S394000
Reexamination Certificate
active
06855464
ABSTRACT:
Overlay measurements are obtained by forming a first grating test pattern using a first layer mask. A second grating test pattern is formed using a second layer mask. The first and second grating test patterns have the same periodicity. The first and second grating test patterns are measured using an optical metrology equipment. The alignment of the second layer mask to the first layer mask is measured based on the measurement of the first and second grating test patterns.
REFERENCES:
patent: 4332473 (1982-06-01), Ono
patent: 4422763 (1983-12-01), Kleinknecht
patent: 4929083 (1990-05-01), Brunner
patent: 5347356 (1994-09-01), Ota et al.
patent: 5545593 (1996-08-01), Watkins et al.
patent: 5672520 (1997-09-01), Natsume
patent: 6079256 (2000-06-01), Bareket
patent: 6498640 (2002-12-01), Ziger
patent: 0 281 030 (1988-09-01), None
patent: 0 422 395 (1991-04-01), None
Neal T. Sullivan, Semiconductor Pattern Overlay, 15 pages, Digital Equipment Corp., Advanced Semiconductor Development, Hudson, MA 01749-2895.
Jakatdar Nickhil
Niu Xinhui
Morrison & Foerster / LLP
Rosasco S.
Timbre Technologies, Inc.
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