Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-10-14
2000-02-29
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 96, 257 98, 257194, 372 46, 372 50, H01L 2906, H01L 3300, H01S 319
Patent
active
060312432
ABSTRACT:
A edge emitting waveguide laser is obtained that derives its optical power from a vertical cavity laser structure. The vertical cavity laser with top and bottom Distributed Bragg Reflectors produces stimulated emission by resonance in the vertical direction but the optical power so generated is diffracted by a second order grating into an optical mode propagating in the optical waveguide formed by the upper and lower mirrors as cladding layers. The efficiency of the diffraction grating and the reflectivity of the mirrors are maximized so that essentially all of the light is coupled into the guide and the loss through the mirrors can be neglected. The same structure can be utilized as a detector, a modulator or an amplifier. The designated laser structure to achieve this form of operation is the inversion channel laser which is a laterally injected laser having both contacts on the top side of the device. Then the anode and cathode of the laser are essentially coplanar electrodes and the device is implemented in the form of a traveling wave laser, detector, modulator or amplifier which forms the basis for very high frequency performance.
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Normal-incidence grating couplers in Ge-Si, J.Sarathy, R.A.Mayer, K.Jung, S.Unnikrishnan, D.-L.Kwong, and J.C.Campbell, Optics Letters, vol. 19, No. 11, pp. 798-800, Feb. 1994.
Taylor Geoff W.
Tran Minh Loan
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