Graphite heater for molecular beam source of carbon

Details Graphite heater for molecular beam source of carbon Graphite heater for molecular beam source of carbon

1994-09-26

1995-06-06

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Crucible or evaporator structure

392386, 219538, 219539, 428367, C23C 1400, C23C 1426

Patent

active

054218969

ABSTRACT:
A graphite filament for generating carbon molecular beam which is heated through application of a current thereto integrally comprises a plurality of portions of which current directions match the c-axis of the graphite and a plurality of portions of which current directions are perpendicular to the c-axis.

REFERENCES:
patent: 3738906 (1973-06-01), Olcott
patent: 4435375 (1984-03-01), Tamura
patent: 4565649 (1986-01-01), Vogel
"Carbon Doping of GaAs for Heterojunction Bipolar Transistors: A Comparison Between MBE and CBE", Benchimol et al, Journal of Crystal Growth, vol. 127, 1993, pp. 690-694.
"Carbon Doping in Molecular Beam Epitaxy of GaAs from a Heated Graphite Filament", Malik et al, Appl. Phys. Lett., vol. 53, No. 26, Dec. 26, 1988, pp. 2661-2663.
"Carbon Doping of MBE GaAs and Gas.sub.0.7 Al.sub.0.3 As Films Using a Graphite Filament", Hoke et al, Journal of Crystal Growth, vol. 111, 1991, pp. 269-273.
"Molecular--Beam Epitaxial Growth of Heavily Acceptor Doped GaAs Layers for GaAlAs/GaAs Heterojunction Bipolar Transistors", Hoke et al, J. Vac. Sci. Technol. B., vol. 10, No. 2, Mar./Apr. 1992, pp. 856-858.
"Carbon Incorporation in (AlGa)As, (AlIn)As and (GaIn)As Ternary Alloys Grown by Molecular Beam Epitaxy", Ito et al, Japanese Journal of Applied Physics, vol. 30, No. 6A, Jun. 1991, pp. 944-947.
"Properties and Applications of Carbon-Doped GaAs and Al.sub.x Ga.sub.1-x As Layers Grown by MBE with a Pyrolytic Graphite Filament", Malik et al, Journal of Crystal Growth, vol. 127, 1993, pp. 686-689.

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