Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Patent
1992-09-17
1994-02-08
Chaudhuri, Olik
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
423348, C01B 3303
Patent
active
052846407
ABSTRACT:
The present invention is directed to a method for making substantially carbon-free polycrystalline silicon which comprises pyrolyzing a gaseous silicon compound on a heated starter filament mounted on a graphite chuck, said heated starter filament being maintained at a temperature sufficient to effect decomposition of the gaseous silicon compound to form polycrystalline silicon which is deposited thereon and by-product hydrogen, wherein the said graphite chuck is provided with a hydrogen impervious outer coating layer to prevent the by-product hydrogen from reacting with the graphite and form methane which decomposes as carbon on the deposited polycrystalline silicon.
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"CVD Coating for Industry and Aerospace" by Midland Materials Research, Inc., promotional literature (date unknown).
Jernegan Michael F.
Winterton Lyle C.
Advanced Silicon Materials Inc.
Chaudhuri Olik
Horton Ken
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