Grain-driven zone-melting of silicon films on insulating substra

Details Grain-driven zone-melting of silicon films on insulating substra Grain-driven zone-melting of silicon films on insulating substra

1984-06-26

1986-04-29

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148177, 156613, 156624, 75 65ZM, H01L 2136, H01L 2140

Patent

active

045854939

ABSTRACT:
A method of growing single crystal layers from polycrystal layers is taught. The method involves forming a eutectic of the polycrystal material and an alloying metal and forming a eutectic bridge between a seed single crystal and the polycrystalline material with the eutectic alloy. The alloy is kept molten and both the single crystal and polycrystal are kept solid at a temperature to induce the eutectic alloy to eat into the polycrystal and to extend the single crystal to form a single crystal layer.

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Grain-Driven Zone Melting, T. R. Anthony, Report No. 84CRD008, Jan. 1984.

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