Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-03-19
1992-10-20
Hille, Rolf
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505 1, 505702, 427 62, H01L 3922, H01B 1200, B05D 512
Patent
active
051574667
ABSTRACT:
Grain boundary, weak-link junctions are formed at a predermined location of a uniform, planar substrate by depositing superconducting film on two sections of the substrate. The film is grown as a bicrystal having two distinct areas of superconducting film whose crystal lattices are rotated with respect to each other, either in-plane or out-of-plane, by more than 5.degree. and less than 90.degree.. The grain boundary acts as a weak link junction. The film can be induced to grow as a bicrystal by depositing intermediate strata such as seed layers or buffer layers or by modifying the growth conditions during deposition.
REFERENCES:
"High T.sub.c Yb-Ba-Cu-O Thin Films Deposited on Sintered YSZ Substrates by Sputtering", Kawasaki et al., Japanese Journal of Applied Physics, vol. 26, #5, May 1987, pp. L738-L740.
Aida et al., "Preparation of YBa.sub.2 Cu.sub.3 O.sub.7-x Superconducting Thin Films by RF-Magnetron Sputtering", Jap. J. of Appl. Phys., vol. 26, #9, Sep. 1987, pp. L1489-L1491.
Hashimoto et al., "Thermal Expansion Coefficients of High-T.sub.c Superconductors", Jap. J. of Appl. Phys., vol. 27, #2, Feb. 1988, pp. L214-L216.
Ramesh et al., "Epitaxy of Y-Ba-Cu-O Thin Films Grown on Single-Crystal MgO", Appl. Phys. Lett., vol. 56, #22, 28 May 1990, pp. 2243-2245.
Char Kook-rin
Garrison Stephen M.
Newman Nathan
Zaharchuk Gregory G.
Conductus, Inc.
Hille Rolf
Jacobs Marvin E.
Saadat Mahshid
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