Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1988-02-16
1992-11-10
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
505702, 505 1, 257 34, H01B 1200
Patent
active
051622980
ABSTRACT:
High T.sub.c superconducting devices are described in which controlled grain boundaries in a layer of the superconductors forms a weak link or barrier between superconducting grains of the layer. A method is described for reproducibly fabricating these devices, including first preparing a substrate to include at least one grain boundary therein. A high T.sub.c superconductor layer is then epitaxially deposited on the substrate in order to produce a corresponding grain boundary in the superconducting layer. This superconducting layer is then patterned to leave at least two regions on either side of the grain boundary, the two regions functioning as contact areas for a barrier device including the grain boundary as a current flow barrier. Electrical contacts can be made to the superconducting regions so that bias currents can be produced across the grain boundary which acts as a tunnel barrier or weak link connection.
REFERENCES:
patent: 4521682 (1985-06-01), Murakami et al.
Appl. Phys. Lett. 51(13), (Sep. 28, 1987, "Preparation and Substrate Reactions of Superconducting Y-Ba-Cu-O Films" by Gurvitch et al., pp. 1027-1029.
Applied Phys. Lett. 51 (12), Sep. 21, 1987, "Y BaCuO Superconducting Thin Films with Zero Resistance at 84K by Multilayer Deposition", by Bao et al. pp. 946-947.
Applied. Phys. Lett. 51 (16), Oct. 19, 1987, "Synthesis of Superconducting Films of the Y-Ba-Cu-O System by a Screen Printing Method" by Budhani et al., pp. 1277-1279.
"Thin Films and Squids Made From YBa.sub.2 Cu.sub.3 O.sub.y ", R. H. Koch et al., Presented at MRS Conference, Apr. 1987, pp. 81-84.
"Properties of CA.sub.1.8 Sr.sub.0.2 CuO.sub.4 Superconductors", A. J. Panson et al., Appl. Phys. Lett., vol. 50, #16, 20 Apr. 1987, pp. 1104-1106.
"Observation of the A. C. Josephson Effect Inside Copper-Oxide-Based Superconductors", D. Esteve et al., Europhysics Letters, vol. 3, #11, 1 Jun. 1987, pp. 1237-1242.
"Superstructure of the Super Conductor Bi.sub.2 Sr.sub.2 Ca Cu.sub.2 O.sub.8 by High-Resolution Electron Microscopy", E. A. Hewat et al., Nature, vol. 333, 5 May 1988, pp. 53-54.
"Hysteresis Loop in Current-Voltage Curve for BaPb.sub.0.7 Bi.sub.0.3 O.sub.3 Josephson Junction Array in a Microwave Field" M. Ito et al., Japanese Journal of Appl. Phys. vol. 21, No. 6, Jun. 1982 pp. L375-L376.
"Temperature Dependence of Maximum DC Josephson Current through Grain Boundary Junctions in BaPb.sub.0.75 Bi.sub.0.25 O.sub.3 Films" M. Suzuki et al., Japanese Journal of Appl. Phys. vol. 21 No. 7, Jul. 1982 pp. L437-L439.
"Highly Sensitive Photodetection Using a Microwave-Coupled BaPb.sub.0.7 Bi.sub.0.3 O.sub.3 Josephson Junction Array"M. Ito et al. Appl Phys Lett 43 (3) Aug. 1, 1983 pp. 314-316.
"New Devices Using Superconducting BaPb.sub.0.7 Bi.sub.0.3 O.sub.3 (BPB) Thin Films" T. Murakami et al., Citation unknown.
Chaudhari Praveen
Chi Cheng-Chung J.
Dimos Duane B.
Mannhart Jochen D.
Tsuei Chang C.
Ellett, Jr. J. David
International Business Machines - Corporation
James Andrew J.
Loke Steven
Stanland Jackson E.
LandOfFree
Grain boundary junction devices using high T.sub.c superconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Grain boundary junction devices using high T.sub.c superconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Grain boundary junction devices using high T.sub.c superconducto will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2292629