Grain boundary confinement in silicon-on-insulator films

Details Grain boundary confinement in silicon-on-insulator films Grain boundary confinement in silicon-on-insulator films

1983-11-14

1985-10-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29582, 148176, 148181, 148187, 148DIG93, 156612, H01L 21265, C30B 1900

Patent

active

045458235

ABSTRACT:
Regular arrays of grain boundary free silicon islands have been produced in a silicon on insulator (SOI) structure by using a pattern antirelfective coating in combination with a laser scanning technique. The antireflective coating pattern is made up of a series of parallel stripes terminating in seeding windows. A laser beam is scanned perpendicular to the stripes and over at least two stripes simultaneously, with the long axis of the beam parallel to the scan direction. Grain boundaries are confined to the region under the antireflective stripes.

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patent: 4468855 (1984-09-01), Sasaki
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"Laser-Induced Lateral Epitaxial Growth of Si Over SiO.sub.2 ", S. Kawamura, J. Sakurai and M. Nakano, pp. 243-244, Extended Abstracts of the Electrochemical Society Spring Meeting, Montreal, Canada, May 1982, vol. 82-1, (Electrochemical Society, Pennington, NJ, 1982).
Appl. Phys. Lett. 40 (12), Jun. 15, 1982, Seeded Oscillatory Growth of Si Over SiO.sub.2 by CW Laser Irradiation, G. K. Celler, L. E. Trimble, K. K. Ng, H. J. Leamy, H. Baumgart, Accepted for Publication 3/30/82, pp. 1043-1045.
Use of Selective Annealing for Growing Very Large Grain Silicon on Insulator Films, J. P. Colinge, E. Demoulin, D. Bensahel, G. Auvert, Accepted for Publication 6/8/82, pp. 346-347, Appl. Phys. Lett. 41(4), Aug. 15, 1982.
IEEE Electron Device Letters, vol. EDL-4, No. 4, Apr. 1983, Transistors Made in Single-Crystal SOI Films, J. P. Colinge, E. Demoulin, D. Bensahel, G. Auvert, H. Morel.

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