Graduated multiple collector structure for inverted vertical bip

Details Graduated multiple collector structure for inverted vertical bip Graduated multiple collector structure for inverted vertical bip

1976-02-12

1978-04-11

Larkins, William D.

357 15, 357 35, 357 36, 357 46, 357 50, H01L 2702, H01L 2972, H01L 2948, H01L 2704

Patent

active

040841740

ABSTRACT:
A graduated multiple collector structure for inverted vertical bipolar transistors, integrated injection logic devices and the like. The invention increases the gain of more distant collectors toward which current flows laterally past intervening collectors from a base contact, and injector or the like. The series resistance drop and the current loss in the base-emitter junction are compensated for by progressively increasing the effective area of collectors further distant from the source of the base current. Although the graduated collector structure is applicable to a wide variety of semiconductor devices, it is particularly well suited for use in oxide-isolated integrated injection logic gates. A mathematical model is provided which can help to optimize designs incorporating the graduated collector structure.

REFERENCES:
patent: 3697962 (1972-10-01), Beausoleil et al.
patent: 3736477 (1973-05-01), Berger et al.
patent: 3962717 (1976-06-01), O'Brien
patent: 3969748 (1976-07-01), Horie et al.
De Troye "Integrated Injection Logic-Present and Future" IEEE J. Solid-State Circuits vol. SC-9 (10/74) pp. 206-211.
Berger et al. "The Bipolar LSI Breakthrough" Part I, Electronics (9/75) pp. 89-95, Part II, Electronics (10/75) pp. 99-103.

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