Grading orientation errors in crystal specimens

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

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378 77, 378 76, G01N 23207

Patent

active

047714468

ABSTRACT:
The invention comprises a method of, and apparatus for, measuring the orientation error in a single crystal. An X-ray beam is reflected from the surface of the crystal while it is rotated, and the orientation error is determined from the figure traced at a detector by the reflected beam. The orientation error may be calculated from the major axes of the traced figure, or, if the X-ray beam contains a characteristic line, from the separation of the two bright spots produced in the traced figure.

REFERENCES:
patent: 3649831 (1972-03-01), Eckerlin
patent: 3870880 (1975-03-01), Merigoux et al.
patent: 4301364 (1981-11-01), Goebel
patent: 4412345 (1983-10-01), Workman et al.
patent: 4637041 (1987-01-01), Brinkgreve et al.

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