Gradient doping in amorphous silicon

Details Gradient doping in amorphous silicon Gradient doping in amorphous silicon

1979-12-28

1981-02-17

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 148188, 204192S, 204192P, 357 2, 357 15, 357 30, C23C 1500, H01L 3104

Patent

active

042512891

ABSTRACT:
An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, the gradient doping profile increases the width of the depletion or barrier region and concurrently ensures an ohmic contact between amorphous silicon and current carrying electrodes.

REFERENCES:
patent: 3271637 (1966-09-01), Webb
patent: 4177473 (1979-12-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4178415 (1979-12-01), Ovshinsky et al.
T. D. Moustakas, "Sputtered Hydrogenated Amorphous Silicon", J. Electronic Materials, vol. 8, pp. 391-435 (1979).
M. J. Thompson et al., "RF Sputtered Amorphous Silicon Solar Cells", Proceedings Int'l. Photovoltaic Solar Energy Conf., Luxembourg, (1977), pp. 231-240.
M. H. Brodsky et al., "Doping of Sputtered Amorphous Semiconductors", IBM Tech. Disc. Bull., vol. 19, pp. 4802-4803 (1977).
P. M. Martin et al., "Property-Composition Relationships in Sputter-Deposited A-Si:H Alloys", Solar Energy Materials, vol. 2, pp. 143-157, (1979/1980).

Affiliated with

Also associated with

Rating

Gradient doping in amorphous silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gradient doping in amorphous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gradient doping in amorphous silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2260590