Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1988-05-11
1999-03-09
Nelson, Peter A.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257444, 257448, H01L 3100
Patent
active
058805109
ABSTRACT:
A Group II-VI IR photodiode 10 has a passivation layer 16 overlying at least exposed surfaces of the p-n diode junction 15, the passivation layer being a compositionally graded layer comprised of Group II atoms diffused into a surface of the p-n diode junction. The passivation layer has a wider energy bandgap than the underlying diode material thereby repelling both holes and electrons away from the surface of the diode and resulting in improved diode operating characteristics. A cation substitution method of the invention includes the steps of preparing a surface to be passivated, such as by depleting an upper surface region of Group II atoms; depositing a layer comprised of a Group II material over the depleted surface region; and annealing the deposited layer and underlying Group II-VI material such that atoms of the deposited Group II layer diffuse into the underlying depleted surface region and fill cation vacancy sites within the depleted surface region. The resulting passivation layer is a compositionally graded layer having an energy bandgap which gradually decreases in value as a function of depth from the surface until the bandgap energy equals that of the underlying bulk material. The preparation of the surface may also be accomplished by providing a body of Group II-VI material which has a substantially stoichiometric composition.
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Cockrum Charles A.
Rhiger David R.
Schulte Eric F.
Lenzen, Jr. G. H.
Nelson Peter A.
Raytheon Company
Schubert W. C.
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