Graded junction termination extensions for electronic devices

Details Graded junction termination extensions for electronic devices Graded junction termination extensions for electronic devices

2007-05-08

2007-05-08

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S708000

Reexamination Certificate

active

11201066

ABSTRACT:
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

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Wolf “Silicon Processing for the VLSI Era”, vol. 1, Lattice Press, pp. 408, 414, no date.

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