Graded in content gallium nitride-based device and method

Details Graded in content gallium nitride-based device and method Graded in content gallium nitride-based device and method

2007-12-19

2011-10-04

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S101000, C257SE33028, C257SE33034

Reexamination Certificate

active

08030641

ABSTRACT:
A gallium nitride-based device has Å first GaN layer and Å type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises Å graded molar In concentration.

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