Graded gap semiconductor optical device

Details Graded gap semiconductor optical device Graded gap semiconductor optical device

1980-04-25

1983-02-01

Arnold, Bruce Y.

350413, 357 30, 357 61, H01L 2714, G02B 102

Patent

active

043712320

ABSTRACT:
A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

REFERENCES:
patent: 3491004 (1970-01-01), Van Dijk et al.
patent: 3793070 (1974-02-01), Schoolar
patent: 3976361 (1976-08-01), Fraas et al.
patent: 4154631 (1979-05-01), Schoolar

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