Graded gap semiconductor detector

Details Graded gap semiconductor detector Graded gap semiconductor detector

1980-04-25

1981-04-21

Edlow, Martin H.

Compositions

Radioactive compositions

Nuclear reactor fuel

357 15, 357 61, 252 623V, H01L 2714

Patent

active

042636043

ABSTRACT:
A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

REFERENCES:
patent: 3059123 (1962-10-01), Pfann
patent: 3574140 (1971-04-01), Schoolar
patent: 3677836 (1972-07-01), Lorenz
patent: 3716424 (1973-02-01), Schoolar
patent: 3779801 (1973-12-01), Halloway
patent: 4154631 (1979-05-01), Schoolar

Affiliated with

Also associated with

Rating

Graded gap semiconductor detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Graded gap semiconductor detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graded gap semiconductor detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-560521