Graded-gap process for growing a SiC/Si heterojunction structure

Details Graded-gap process for growing a SiC/Si heterojunction structure Graded-gap process for growing a SiC/Si heterojunction structure

1996-02-06

1997-09-23

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

257 77, 148DIG148, H01L 2120

Patent

active

056704143

ABSTRACT:
The present invention relates to a graded-gap process for forming a SiC/Si heterojunction electrical element and includes steps of a) provide a Si substrate; b) introduce a hydrogen containing gas stream to the Si substrate; c) introduce a silane-containing gas stream of a constant flow rate to the Si substrate for reacting with the hydrogen-containing gas stream for a first period of time; d) introduce an alkanes-containing gas stream of a gradually changing flow rate to the Si substrate for reacting with the hydrogen- containing gas stream and the silane-containing gas stream to grow a SiC layer on the Si substrate for a second period of time; and e) introduce the alkanes-containing gas stream at a constant flow rate for reacting with the hydrogen-containing gas stream and the silane-containing gas stream for a third period of time. Such process can grow an excellent graded band-gap SiC/Si heterojunction diode with low cost.

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