Graded extended drain concept for reduced hot electron effect

Details Graded extended drain concept for reduced hot electron effect Graded extended drain concept for reduced hot electron effect

1988-05-20

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 26, 437 27, 437 28, 437 29, 357 233, H01L 2978, H01L 2936, H01L 298

Patent

active

048596205

ABSTRACT:
Hot electron injection into the gate oxides of MOSFET devices imposes limitations on the miniaturization of such devices in VLSI circuits. A buried channel with a graded, buried spacer is provided to guard against hot electron trapping effects while preserving process and structure compatibility with micron or submicron VLSI devices. The channel current is redirected into a buried channel at a distance away from the interface in the vicinity of the drain region where the hot electron effect is most likely to occur.

REFERENCES:
patent: 3936857 (1976-02-01), Ota
patent: 4247860 (1981-01-01), Tihanyi
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4590663 (1986-05-01), Haken
patent: 4613882 (1986-09-01), Pimbley et al.
patent: 4680603 (1987-07-01), Wei et al.
patent: 4691433 (1987-09-01), Pimbley et al.
Takeda et al., "Submicrometer MOSFET Structure for Minimizing Hot-Carrier Generation", IEEE Trans. on Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 611-618.
Wada et al., "A Study of Hot-Carrier Degradation in Optimizing 1 .mu.m LDD-MOSFET Using Device Simulator", Presented at the 45th Japanese Applied Physics Conference, Oct. 12-15, 1984.
Codella et al., "Halo Doping Effects in Submicron DI-LDD Device Design", IEDM, 1985, pp. 230-233.
Iwaki et al., "Concentration Profiles of Arsenic Implanted in Silicon" in: Crowder, ed., Ion Implantation in Semiconductors and Other Materials, Plenum Press, 1973, pp. 111-118.
Blood et al., "The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals" in: Crowder, ed., Ion Implantation in Semiconductors and Other Materials, Plenum Press, 1973, pp. 75-85.
Tsai et al., "Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance" in: Crowder, ed., Ion Implantation in Semiconductors and Other Materials, Plenum Press, 1973, pp. 87-98.

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