Patent
1985-04-12
1987-07-14
James, Andrew J.
357 239, 357 2312, 357 20, 357 90, 357 91, H01L 2978, H01L 2908, H01L 2936
Patent
active
046806032
ABSTRACT:
Hot electron injection into the gate oxides of MOSFET devices imposes limitations on the miniaturization of such devices in VLSI circuits. A buried channel with a graded, buried spacer is provided to guard against hot electron trapping effects while preserving process and structure compatibility with micron or submicron VLSI devices. The channel current is redirected into a buried channel at a distance away from the interface in the vicinity of the drain region where the hot electron effect is most likely to occur.
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Pimbley Joseph M.
Wei Ching-Yeu
Cutter Lawrence D.
Davis Jr. James C.
General Electric Company
James Andrew J.
Lamont John
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