Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1991-04-15
1994-09-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257185, 257188, 257442, H01L 3112, H01L 3116
Patent
active
053450930
ABSTRACT:
Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail.
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patent: 5051804 (1991-09-01), Morse et al.
patent: 5061973 (1991-10-01), Chu
Lanza, C., et al. "Image Converter" IBM Tech. Disc. Bull. vol. 12, No. 11, pr. 1970, pp. 1870-1871.
Crane Sara W.
Shuster Jacob
The United States of America as represented by the Secretary of
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