Graded bandgap rectifying semiconductor devices

Details Graded bandgap rectifying semiconductor devices Graded bandgap rectifying semiconductor devices

1980-01-29

1982-10-05

Edlow, Martin H.

357 30, 357 15, 357 88, 357 4, H01L 29161, H01L 2714

Patent

active

043530818

ABSTRACT:
A unipolar, rectifying semiconductor device is described. Rectification is produced by an asymmetric potential barrier created by a sawtooth-shaped composition profile of Al.sub.x Ga.sub.1-x As between layers of n-type GaAs. Single and multiple barriers, as well as doped and undoped barriers, show rectification. Also described is the incorporation of this type of device in an infrared detector, a hot electron transistor and mixer diodes.

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