Graded bandgap multilayer avalanche photodetector with energy st

Details Graded bandgap multilayer avalanche photodetector with energy st Graded bandgap multilayer avalanche photodetector with energy st

1982-02-23

1984-10-09

Edlow, Martin H.

357 13, 357 16, 357 61, H01L 3714

Patent

active

044764774

ABSTRACT:
A multistage avalanche photodetector in which the ionization energy is provided by an energy band discontinuity is described. The photodetector provides low noise optical detection at low voltage.

REFERENCES:
patent: 4203124 (1980-05-01), Gordon et al.
patent: 4213138 (1980-07-01), Campbell et al.
patent: 4231049 (1980-10-01), Pearsall
patent: 4383269 (1983-05-01), Capasso
patent: 4390889 (1983-06-01), Capasso et al.
R. J. McIntyre, "Multiplication Noise in Uniform Avalanche Diodes," IEEE Transactions on Electron Devices, vol. ED-13, No. 1, Jan. 1966, pp. 164-168.
R. Chin, et al., "Impact Ionisation in Multilayered Heterojunction Structures," Electronics Letters, vol. 16, No. 12, Jun. 5, 1980, pp. 467-469.

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