Coating processes – Electrical product produced – Condenser or capacitor
Patent
1978-05-24
1979-12-18
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
29590, 357 17, 357 67, 357 71, 427 85, 427 87, 427 90, 427 91, 427383D, H01L 2348
Patent
active
041795342
ABSTRACT:
A semiconductor device with a low resistance ohmic contact, strongly adherent to the n-type surface of a body (11) of Group III-V compound semiconductor is obtained by a process including the sequential deposition of gold (13), tin (14) and gold (15) at a surface temperature of less than 200 degrees C followed by a heat treatment in a nonoxidizing atmosphere. This process has shown particular advantage when applied to aluminum containing compound semiconductors (e.g., gallium aluminum arsenide). For such use an initial deposition of aluminum (16) has proven particularly successful in producing consistently low resistance ohmic contacts. The invention has been used in the production of light emitting diodes.
REFERENCES:
patent: 3636618 (1972-01-01), Herzog et al.
patent: 3850688 (1974-11-01), Halt
patent: 3890699 (1975-06-01), Vilms
patent: 3942243 (1976-03-01), Murray
patent: 3959522 (1976-05-01), Ladany et al.
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4081824 (1978-03-01), Keramidas
Paola, "Metallic Contacts for Gallium Arsenide", Solid-State Electronics, vol. 13, pp. 1189-1197 (1970).
Rideout, "A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors", Solid-State Electronics, vol. 18, pp. 541-550 (1975).
Buene et al., "Alloying Behavior of Au-In and Au-Sn Films on Semiconductors", Thin Solids Films, vol. 34, pp. 149-152 (1976).
Shih et al., "Contact Resistances of Au-Ge-Ni, Au-Zn and Al to III-V Compounds", SSE vol. 15, No. II-A, pp. 1177-1180, 1972.
Chang Chuan C.
Ermanis Felix
McCoy Robert J.
Nakahara Shohei
Sheng Tan T.
Bell Telephone Laboratories Incorporated
Friedman Allen N.
Laumann Richard D.
Smith John D.
LandOfFree
Gold-tin-gold ohmic contact to N-type group III-V semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gold-tin-gold ohmic contact to N-type group III-V semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gold-tin-gold ohmic contact to N-type group III-V semiconductors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-453842