Metal working – Method of mechanical manufacture – Electrical device making
Patent
1981-04-15
1983-11-29
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29578, 427 89, 357 71, H01C 1728
Patent
active
044173873
ABSTRACT:
Gold is preferred as the conductor material in a metallization layer of a semiconductor device because of its high conductivity and freedom from electromigration effects but gold is inclined to diffuse into the semiconductor substrate typically silicon, so degrading the p-n junction characteristics within the semiconductor substrate and rendering the device inoperative. Previously this problem has been overcome by placing a protective barrier layer of titanium between the gold layer and the substrate. The gold/titanium interface is subject to corrosion and this corrosion adjacent the substrate containing the active areas of the device also leads to failure of the device. This is prevented by covering the gold metallization layer of the device on its top, bottom and side surfaces with titanium. This prevents the diffusion of the gold into any other layer of the semiconductor device above or below it and there is no gold/titanium interface exposed adjacent any active area of the device.
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patent: 3601666 (1971-08-01), Leedy et al.
patent: 3647585 (1972-03-01), Fritzinger et al.
patent: 3686080 (1972-08-01), Banfield et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 4005455 (1977-01-01), Watrous et al.
Hearn Brian E.
Hey David A.
The Post Office
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