Gold-doped IC resistor region

Details Gold-doped IC resistor region Gold-doped IC resistor region

1980-07-21

1984-02-14

Larkins, William D.

357 41, 357 64, H01L 2704, H01L 29167

Patent

active

044320086

ABSTRACT:
Resistive elements of semiconductor devices and integrated circuits are reduced in size thereby allowing larger scale integration. Deep level dopants including impurities or crystalline lattice defects, or both, are formed in a low resistance doped region thereby increasing the resistance of a portion of the doped region. Resistive contacts and interconnects require less semiconductor surface area.

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Whight et al., Solid State Electronics, vol. 19, pp. 1021-1027, 1976.
Ku, Solid State Electronics, vol. 20, pp. 803-812, 1977.

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