Gold diffusion method for semiconductor devices of high switchin

Details Gold diffusion method for semiconductor devices of high switchin Gold diffusion method for semiconductor devices of high switchin

1989-12-12

1990-10-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437146, 437154, 148DIG38, 148DIG62, H01L 21225

Patent

active

049635093

ABSTRACT:
Gold is diffused into a silicon substrate by first depositing an ultrathin layer of gold on one of the main faces of the substrate and then by heating the substrate to a temperature range of about 300.degree.-850.degree. C., instead of to about 1000.degree. according to the prior art. Then, following the removal of the remaining gold layer from over the substrate, the latter is reheated to a higher temperature ranging from about 700.degree. C. to about 1000.degree. C. for activating the diffused gold. The gold diffusion at the reduced temperature serves to decrease the surface irregularities of the substrate as a result of gold-silicon alloy zones created at the interface between gold layer and silicon substrate during the thermal diffusion process.

REFERENCES:
patent: 3184347 (1965-05-01), Hoerni
patent: 3440113 (1969-05-01), Wolley
patent: 3473976 (1969-11-01), Castrucci et al.
patent: 3645808 (1972-02-01), Kamiyama et al.
patent: 3864174 (1975-02-01), Akiyama et al.
patent: 3941625 (1976-03-01), Kennedy et al.
patent: 3943013 (1976-03-01), Kennedy et al.

Affiliated with

Also associated with

Rating

Gold diffusion method for semiconductor devices of high switchin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gold diffusion method for semiconductor devices of high switchin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gold diffusion method for semiconductor devices of high switchin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-849728