Gold alloy bonding wire for semiconductor device

Details Gold alloy bonding wire for semiconductor device Gold alloy bonding wire for semiconductor device

2006-01-31

2006-01-31

Zimmerman, John J. (Department: 1775)

Stock material or miscellaneous articles

All metal or with adjacent metals

Foil or filament smaller than 6 mils

C420S507000, C420S508000, C257S741000

Reexamination Certificate

active

06991854

ABSTRACT:
A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3–30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3–30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

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