GMR sensor with end portion magnetization of pinned layer...

Details GMR sensor with end portion magnetization of pinned layer... GMR sensor with end portion magnetization of pinned layer...

2005-06-14

2005-06-14

Renner, Craig A. (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06906899

ABSTRACT:
A magneto-resistive (MR) sensor is provided including a pinned layer, and a free layer disposed above the pinned layer. Also included is a pair of leads disposed over portions of the free layer. Further, a pinning layer is disposed below the pinned layer. Disposed below the pinning layer is an underlayer. For enhanced operation, first portions of the pinned layer disposed below the leads have a first pinned layer magnetization parallel with a free layer magnetization associated with the free layer in the absence of an external field. Further, a second portion of the pinned layer has a second pinned layer magnetization perpendicular with the free layer magnetization in the absence of the external field.

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Mougin, A. et al., “Exchange Bias Effect; 6.11 Local Manipulation and reversal of the exchange bias field by ion irradiation in FeNi/FeMn Double Layers” AG Magnetismus, Universitat Kaiserslautern, Nov. 2000.

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