GMR sensor having layers treated with nitrogen for increased...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

11039085

ABSTRACT:
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.

REFERENCES:
patent: 5949622 (1999-09-01), Kamiguchi et al.
patent: 6157525 (2000-12-01), Iwasaki et al.
patent: 6278592 (2001-08-01), Xue et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6347049 (2002-02-01), Childress et al.
patent: 6407892 (2002-06-01), Shiroishi
patent: 6495275 (2002-12-01), Kamiguchi et al.
patent: 6707084 (2004-03-01), Katti et al.
patent: 6709696 (2004-03-01), Everitt et al.
patent: 6714387 (2004-03-01), Horng et al.
patent: 2002/0024778 (2002-02-01), Xue et al.
patent: 2002/0164828 (2002-11-01), Ishiwata et al.
patent: 2003/0146186 (2003-08-01), Kanakubo et al.
patent: 2003/0199104 (2003-10-01), Leuschner et al.
patent: 2004/0042128 (2004-03-01), Slaughter et al.
patent: 2004/0052004 (2004-03-01), Nakayama
patent: 2004/0101702 (2004-05-01), Kim et al.
patent: 2004/0161636 (2004-08-01), Hujanen et al.
patent: 2005/0280933 (2005-12-01), Nakayama
patent: 10065232 (1998-03-01), None
patent: 11284248 (1999-10-01), None
Heejae Shim, B.K. Cho, Jin-Tae Kim, T.W. Kim and W.J. Park, “Effect of Nitrogen Plasma Treatment at the Al2O3/Fe Interface In Magnetic Tunnel Junction,” Journal of Applied Physics, vol. 93, No. 10, May 15, 2003.
Heejae Shim, J.M. Park, K.P. Kim, B.K. Cho, Jin-Tae Kim and Y. Park, “Magnetic Tunnel Junctions with a Tunnel Barrier Formed by N2O Plasma,”, Applied Physics Letters, vol. 83, No. 22, Dec. 1, 2003.
Ping Shang, Amanda K. Petford-Long, Janice H. Nickel, Manish Sharma, and Thomas C. Anthony, “EELS and HRAM Study of Tunnelling Junctions With AIN and AION Barriers,” Paper presented at Electron Microscopy and Analysis Group Conference. EMAG2001 , Dundee, 2001.
M. Tsunoda, T. Miyata, S. Miura, and M. Takahashi, “Structure and GMR in Ni-Fe/Cu Multilayers Fabricated by an Ultra-Clean Sputtering Process,” J. Mag. Soc. Japan. vol. 22, No. 4-2, 1998.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

GMR sensor having layers treated with nitrogen for increased... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GMR sensor having layers treated with nitrogen for increased..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GMR sensor having layers treated with nitrogen for increased... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3811190

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.