GMR enhancing seedlayer for self pinned spin valves

Details GMR enhancing seedlayer for self pinned spin valves GMR enhancing seedlayer for self pinned spin valves

2007-04-10

2007-04-10

Watko, Julie Anne (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

11201940

ABSTRACT:
A magnetic head includes a seed layer structure comprising Al2O3, Ta, and NiFeCr seed layers. An antiparallel (AP) pinned layer structure is formed above the NiFeCr seed layer. A free layer is positioned above the AP pinned layer structure.

REFERENCES:
patent: 6275363 (2001-08-01), Gill
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 2002/0090534 (2002-07-01), Shirasaki et al.
patent: 2003/0002228 (2003-01-01), Suwabe et al.
patent: 9-153650 (1997-06-01), None
IBM TDB NNRD452108, “Self-pinned tunnel valve head”, Dec. 2001, No. 452, p. 2106.
IBM TDB NNRD449125, “Self-pinned GMR head structure”, Sep. 2001, No. 449, p. 1574.

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