GMR enhancement in inhomogeneous semiconductors for use in magne

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428611, 428694R, 428694T, 428694TS, 428900, 360113, 324252, 338 32R, G11B 566

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059652837

ABSTRACT:
The low-field magnetoresistance of a high carrier mobility semiconductor with inhomogeneities which are more conducting than the surrounding semiconductor material matrix is significantly enhanced compared to the magnetoresistance of the homogeneous material. The enhancement results from a magnetic field induced geometric effect in which current is expelled from the conducting inhomogeneity. The enhanced giant magnetoresistance is demonstrated at low field in (near) zero-band-gap material, such as Hg.sub.1-x Cd.sub.x Te(x.about.0.1). The effect is applied to the fabrication of magnetic read head sensors such as Corbino disc, bar magnetoresistance sensors and thin film sensors.

REFERENCES:
patent: 5622874 (1997-04-01), Seidler
patent: 5696655 (1997-12-01), Kawano
patent: 5699215 (1997-12-01), Solin
Herring, "Effect of Random Inhomogeneities on Electrical and Galavanomagnetic Measurements", Journal of Applied Physics, vol. 31, No. 11, pp. 1939-1953, Nov. 1990.
Wolfe et al., "High Apparent Mobility in Inhomogeneous Semiconductors", Journal of the Electrochemical Society, vol. 119, No. 2, pp. 250-255, Feb. 1972.
Solin et al., "Self-Biasing Nonmagnetic Giant Magnetoresistance Sensor", Applied Physics Letter 69 (26), pp. 4105-4107, Dec. 23, 1996.
Dieny et al, "Magnetotransport Properties of Magnetically Soft Spin-Valve Structures", Journal Applied Physics 69 (8), pp. 4774-4779, Apr. 15, 1991.
Dieny et al, "Giant Magnetoresistance in Soft Ferromagnetic Multilayers", Physical Review B, vol. 43, No. 1, pp. 1297-1300, Jan. 1, 1991.
Korol ' et al, "Magnetoresistance of CdHgTe Near Gapless State", Sov. Phys. Semicond., vol. 11, No. 3, pp. 288-289, Mar. 1977.
Korol' et al. Investigation of Cd.sub.x Hg.sub.1=x Te Magnetoresistors in the Temperature Range 4,2-300.degree.K, Sov. Phys. Semicond. 12(3), pp. 275-276, Mar. 1978.
Wolfe et al, "Anomalously High "Mobility" in Semiconductors", Applied Physics Letters, vol. 18, No. 5, pp. 205-208, Mar. 1, 1971.

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