GMR and MR enhancing seedlayers for self pinned spin valves

Details GMR and MR enhancing seedlayers for self pinned spin valves GMR and MR enhancing seedlayers for self pinned spin valves

2007-02-27

2008-09-02

Watko, Julie Anne (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07420788

ABSTRACT:
A magnetic head includes a seed layer structure comprising Ta and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; a free layer positioned above the AP pinned layer structure; and a layer of metal oxide positioned between the free layer and the AP pinned layer structure. A magnetic head in another embodiment includes a seed layer structure comprising Al2O3, Ta, and NiFeCr seed layers, wherein a thickness of the NiFeCr seed layer is less than about a thickness of at least one of the Al2O3and Ta seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; and a free layer positioned above the AP pinned layer structure. In another embodiment, a thickness of the NiFeCr seed layer is greater than about a thickness of at least one of the Al2O3and Ta seed layers.

REFERENCES:
patent: 6278592 (2001-08-01), Xue et al.
patent: 6687098 (2004-02-01), Huai
patent: 7203038 (2007-04-01), Pinarbasi
patent: 2004/0136121 (2004-07-01), Mao et al.

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