Glow discharge plasma deposition of thin films

Coating apparatus – Gas or vapor deposition – With treating means

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118 501, C23C 1308

Patent

active

044507879

ABSTRACT:
A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

REFERENCES:
patent: 3526584 (1964-09-01), Shaw
patent: 3962988 (1976-06-01), Murayawa et al.
patent: 4317844 (1982-03-01), Carlson
"Glow Discharge Phenomena in Plasma Etching and Plasma Deposition" by J. L. Vossen, Journal of the Electrochemical Society, Feb. 1979, pp. 319-324.

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