Coating apparatus – Gas or vapor deposition – Running length work
Patent
1992-03-27
1993-11-30
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
Running length work
118719, 118723E, 118733, C23C 1650, C23C 1654
Patent
active
052661164
ABSTRACT:
An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4438724 (1984-03-01), Doehler et al.
patent: 4450786 (1984-05-01), Doehler et al.
patent: 4462332 (1984-07-01), Nath et al.
patent: 4664951 (1987-05-01), Doehler
patent: 4763601 (1988-08-01), Saida et al.
patent: 4951602 (1990-08-01), Kanai
Fujioka Yasushi
Kanai Masahiro
Kohda Yuzo
Kurokawa Takashi
Sano Masafumi
Baskin Jonathan D.
Canon Kabushiki Kaisha
Hearn Brian E.
LandOfFree
Glow discharge apparatus for continuously manufacturing semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Glow discharge apparatus for continuously manufacturing semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glow discharge apparatus for continuously manufacturing semicond will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2092445