Global planarization of multiple layers

Details Global planarization of multiple layers Global planarization of multiple layers

1994-03-30

1996-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437225, 437228, 1566361, 1566451, H01L 2144

Patent

active

055321887

ABSTRACT:
A method is disclosed for performing global planarization of the top layer of a structure having multiple patterned layers, during fabrication of an integrated circuit (10). An integrated circuit fabricated using the method is also disclosed. The method involves globally planarizing an integrated circuit (10) having a plurality of patterned layers (14, 18) interleaved with a plurality of unpatterned layers (16, 20). Each of the patterned layers (14, 18) is associated with a pattern mask (22, 24). The topmost layer (20) can be an unpatterned layer. Next, the pattern masks (22, 24) are combined to form a planarizing block mask (44) by merging a weighted inverse spatial interpolation of each pattern mask (22, 24). A planarizing block layer (60) is then formed on top of the topmost layer (20) using the planarizing block mask (44). Next, an unpatterned planarizing film layer (62) is formed on top of the planarizing block layer (60). Finally, the film layer (62), the block layer (60) and the topmost layer (20) are etched to cause global planarization of the topmost layer (20).

REFERENCES:
patent: 5015602 (1991-05-01), Van Der Plas et al.
patent: 5212114 (1993-05-01), Grewal et al.
patent: 5284804 (1994-02-01), Moslehi
patent: 5294562 (1994-03-01), Lur et al.
patent: 5302551 (1994-04-01), Iranmanesh et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5326718 (1994-07-01), Klose et al.
patent: 5332467 (1994-07-01), Sune et al.
T. H. Daubenspeck, J. K. DeBrosse, C. W. Koburger, M. Armacost, and J. R. Abernathey, Planarization of ULSI Topography over Variable Pattern Densities, J. Electrochem. Soc. vol. 138, No. 2, Feb. 1991.
Andrew Nagy, John Helbert, Planarized Inorganic Interlevel Dielectric for Multilevel Metallization--Part I, Solid State Technology, pp. 53-56, Jan. 1991.

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