Glass-type planar substrate, use thereof, and method for the...

Details Glass-type planar substrate, use thereof, and method for the... Glass-type planar substrate, use thereof, and method for the...

2007-08-21

2007-08-21

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000, C438S457000, C438S459000, C438S795000, C438S107000, C257SE21220

Reexamination Certificate

active

10526962

ABSTRACT:
The invented method is distinguished by a combination of the following method steps:provision of a semiconductor planar substrate composed of a semiconductor material,reduction of the thickness of the semiconductor planar substrate inside at least one surface region of the semiconductor planar substrate in order to form a raised surface region in relation to the surface planar region of reduced thickness,structuring the raised surface region of the semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside the raised surface regions,joining the structured surface of the semiconductor planar substrate with the glasslike planar substrate in such a manner that the glasslike planar substrate at least partially covers the surface planar region of reduced thickness,tempering the joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, the glasslike planar substrate covering the surface region of reduced thickness forms a fluid-tight bond with the surface region of reduced thickness, with the planar substrate covering the impressions in a fluid-tight manner under vacuum conditions, and that in a second tempering phase, at least partial areas of the glasslike material flow into the impressions of the structured surface of the semiconductor planar substrate.

REFERENCES:
patent: 6030829 (2000-02-01), Dannoux et al.
patent: 199 56 654 A 1 (2001-06-01), None
patent: 2 241 233 (1991-08-01), None

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