Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-01-25
2005-01-25
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C349S056000
Reexamination Certificate
active
06847097
ABSTRACT:
Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
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Inventor: Yasuhiko Takemura, “Process for Fabricating Semiconductor Device” Filing Date: Oct. 26, 2001, Specifications and Drawings for US application Ser. No. 09/983,882.
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Fukada Takeshi
Sakama Mitsunori
Teramoto Satoshi
Malsawma Lex H.
Smith Matthew
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